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Investigations of the band structures of edge-defect zigzag graphene nanoribbons using density functional theory

机译:利用密度函数理论研究边缘缺陷Zig形石墨烯纳米波纹乐队结构的研究

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摘要

We used density functional theory to investigate the band gap and the electron conductivity of edge-defect zigzag graphene nanoribbons (ZGNR). The band structures of edge-oxidized ZGNRs (ox-ZGNRs) were hardly affected by introducing carboxyl and hydroxyl groups, but were markedly altered near the Fermi level by the ketone and ether groups, resulting in open band gaps of 0.6064 eV and 0.6413 eV, respectively. Unlike carboxyl and hydroxyl groups, the ketone and ether groups caused noticeable changes due to disruption of the sp ~(2) hybridization of edge carbon atoms via forming chemical bonds with them. While the band gaps for both-side pyridinic and pyrrolic edge-nitrided ZGNRs (N-ZGNRs) holding aromatic forms are respectively calculated to 0.2882 eV and 0.3057 eV, the non-aromatic graphitic group has a higher band gap of 0.4244 eV. The edge-aromatic ZGNRs including carboxyl or hydroxyl groups in ox-ZGNRs and pyridinic or pyrrolic groups in N-ZGNRs show similar features of band structures and properties as displayed in a pristine ZGNR. On the contrary, the edge-nonaromatic ZGNRs modified with ketone, ether, or graphitic groups have different shapes of the band structures whose band gaps are more open than that of a pristine ZGNR.
机译:我们使用密度泛函理论来研究边缘缺陷Zigzag石墨烯纳米杆(ZGNR)的带隙和电子电导率。通过引入羧基和羟基的边缘氧化ZgNRs(OX-ZGNR)的带状结构,但通过酮和醚基在FERMI水平附近显着改变,导致开放带间隙为0.6064eV和0.6413eV,分别。与羧基和羟基不同,酮和醚基团由于边缘碳原子的SP〜(2)杂交而通过与它们形成化学键而导致的显着变化。虽然含有芳族吡啶碱和吡啶吡啶和吡啶吡喃啶和吡咯的边缘氮化ZGNRs(N-ZGNR)的带间隙分别计算为0.2882eV和0.3057eV,但非芳族石墨基团具有0.4244eV的较高带隙。 N-ZGNR中的羧基或羟基中的羧基或羟基或N-ZGNR中的吡啶基或吡啶基团的边缘芳族ZgNR显示出具有在原始ZGNR中显示的带结构和性质的类似特征。相反,用酮,乙醚或石墨基团修饰的边缘 - 非芳族ZgNR具有与频带间隙比原始ZGNR更开放的带结构的不同形状。

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