Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi0.9Eu0.1FeO3/La0.67Sr0.33MnO3/PMN-PT heterostructures

摘要

A single device with extensive new functionality is highly attractive for the increasing demands for complex and multifunctional optoelectronics. Multi-field coupling has been drawing considerable attention because it leads to materials that can be simultaneously operated under several external stimuli ( e.g. magnetic field, electric field, electric current, light, strain, etc. ), which allows each unit to store multiple bits of information and thus enhance the memory density. In this work, we report an electro–opto–mechano-driven reversible multi-state memory device based on photocurrent in Bi _(0.9) Eu _(0.1) FeO _(3) (BEFO)/La _(0.67) Sr _(0.33) MnO _(3) (LSMO)/0.7Pb(Mg _(1/3) Nb _(2/3) )O _(3) -0.3PbTiO _(3) (PMN-PT) heterostructures. It is found that the short-circuit current density ( J _(sc) ) can be switched by the variation of the potential barrier height and depletion region width at the Pt/BEFO interface modulated by light illumination, external strain, and ferroelectric polarization reversal. This work opens up pathways toward the emergence of novel device design features with dynamic control for developing high-performance electric–optical–mechanism integrated devices based on the BiFeO _(3) -based heterostructures.