...
首页> 外文期刊>Journal of nanomaterials >Improvement of Photocatalytic Performance for the g-C3N4/MoS2 Composite Used for Hypophosphite Oxidation
【24h】

Improvement of Photocatalytic Performance for the g-C3N4/MoS2 Composite Used for Hypophosphite Oxidation

机译:用于次磷酸盐氧化的G-C3N4 / MOS2复合材料的光催化性能改善

获取原文
   

获取外文期刊封面封底 >>

       

摘要

The synthesized g-C3N4/MoS2 composite was a high-efficiency photocatalytic for hypophosphite oxidation. In this work, a stable and cheap g-C3N4 worked as the chelating agent and combined with the MoS2 materials. The structures of the fabricated g-C3N4/MoS2 photocatalyst were characterized by some methods including X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS). Moreover, the photocatalytic performances of various photocatalysts were measured by analyzing the oxidation efficiency of hypophosphite under visible light irradiation and the oxidation efficiency of hypophosphite using the g-C3N4/MoS2 photocatalyst which was 93.45%. According to the results, the g-C3N4/MoS2 composite showed a promising photocatalytic performance for hypophosphite oxidation. The improved photocatalytic performance for hypophosphite oxidation was due to the effective charge separation analyzed by the photoluminescence (PL) emission spectra. The transient photocurrent response measurement indicated that the g-C3N4/MoS2 composites (2.5?μA?cm–2) were 10 times improved photocurrent intensity and 2 times improved photocurrent intensity comparing with the pure g-C3N4 (0.25?μA?cm–2) and MoS2 (1.25?μA?cm–2), respectively. The photocatalytic mechanism of hypophosphite oxidation was analyzed by adding some scavengers, and the recycle experiments indicated that the g-C3N4/MoS2 composite had a good stability.
机译:合成的G-C3N4 / MOS2复合材料是次磷酸盐氧化的高效光催化。在这项工作中,稳定和廉价的G-C3N4用作螯合剂并与MOS2材料合并。制造的G-C3N4 / MOS2光催化剂的结构表征了一些方法,包括X射线衍射(XRD),扫描电子显微镜(SEM)和X射线光电子谱(XPS)。此外,通过使用G-C3N4 / MOS2光催化剂的可见光照射和次磷酸盐的氧化效率分析次磷酸盐的氧化效率,测量各种光催化剂的光催化性能。根据结果​​,G-C3N4 / MOS2复合材料显示出对次磷酸盐氧化的有希望的光催化性能。改善的次磷酸盐氧化的光催化性能是由于光致发光(PL)发射光谱分析的有效电荷分离。瞬态光电流响应测量表明G-C3N4 / MOS2复合材料(2.5≤μA≤CM-2)的光电流强度提高10倍,并与纯G-C3N4(0.25ΩμAμA-2相比较的光电流强度的2倍。 )分别和MOS2(1.25?μA?cm-2)。通过添加一些清除剂来分析次磷酸盐氧化的光催化机制,并回收实验表明G-C3N4 / MOS2复合材料具有良好的稳定性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号