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首页> 外文期刊>Journal of Materials Research and Technology >Investigation of structural and optical properties of molybdenum disulfide flakes/polyvinylidene fluoride nanocomposites
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Investigation of structural and optical properties of molybdenum disulfide flakes/polyvinylidene fluoride nanocomposites

机译:二硫化钼薄片的结构和光学性能/聚偏二氟乙烯纳米复合材料的研究

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There is a growing potential use of molybdenum disulfide (MoS2) nanosheets loaded in polyvinylidene fluoride (MoS2/PVDF) in the fields of optoelectronics, ion batteries, and energy storage applications. The one-pot hydrothermal route was used to obtain exfoliated MoS2. The MoS2nanoflakes were used to obtain MoS2/PVDF nanocomposite films by the solution casting process. The weight percent of MoS2were 0, 0.1, 0.3, 0.5, 1, 3, 5, 10, and 20?wt% of the total weight of PVDF in the nanocomposite films. After annealing of the PVDF and MoS2/PVDF samples at 160?°C, the FTIR study showed many spectral changes including the spectral shift to high wavenumbers and the appearance of new peaks. These spectral changes indicate increasing of crystallinity, strong molecular bonds, and some crystal phase transition from γ to the β phase. Using Davis Mott's relation, the bandgap of MoS2/PVDF nanocomposites before and after annealing was determined. As the concentrations of MoS2increase, the values of the optical bandgap decrease from 5.72 to 1.83?eV. Annealing the MoS2/PVDF nanocomposite at 160?°C resulted a remarkable decrease in the values of the bandgap energies from 5.64 to 1.16?eV. Tuning the bandgap energy could be achieved by a polynomial fitting to the experimental results. The X-ray diffraction (XRD) showed that PVDF/MoS2nanocomposite films are amorphous, upon annealing at 160?°C partial crystallization occurred; however, the incorporation of MoS2/PVDF obstructs the crystallization of the MoS2/PVDF nanocomposite films.
机译:在光电子,离子电池和储能应用领域的聚偏二氟乙烯(MOS2 / PVDF)中,莫氟二硫化钼(MOS2)纳米片的潜在使用越来越多地使用。单壶水热路线用于获得剥离MOS2。 MOS2NANOFLAKES用于通过溶液浇铸过程获得MOS2 / PVDF纳米复合膜。纳米复合膜中PVDF总重量的0,0.1,0.3,0.5,1,3,5,10和20μl%的MOS2的重量百分比。在160℃下退火PVDF和MOS2 / PVDF样品后,FTIR研究显示了许多光谱变化,包括高挥虫器的光谱转变和新峰的外观。这些光谱变化表明结晶度,强分子键和一些从γ转变为β相的晶相转变的增加。使用Davis Mott的关系,测定了退火前后MOS2 / PVDF纳米复合材料的带隙。作为MOS2的浓度,光学带隙的值从5.72降低到1.83Δev。在160℃下退火MOS2 / PVDF纳米复合材料导致带隙能量的值显着降低,从5.64到1.16?EV。调整带隙能量可以通过对实验结果的多项式配合来实现。 X射线衍射(XRD)显示PVDF / MOS2NANOC复合膜是无定形的,在发生160℃的局部结晶时在退火时;然而,掺入MOS2 / PVDF阻碍MOS2 / PVDF纳米复合膜的结晶。

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