The Investigation of Hybrid PEDOT:PSS/β-Ga ₂O ₃ Deep Ultraviolet Schottky Barrier Photodetectors

摘要

In this paper, the hybrid β-Ga_(2)O_(3)Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ? _( b )increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga_(2)O_(3)interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R _(254 nm)/ R _(400 nm)up to 1.26 × 10~(3)are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga_(2)O_(3)Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.