The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar Cell

摘要

Overall, CdSe:Ag+ quantum dots were prepared by the successive ionic layer absorption and reaction method using two solutions: mixing molar concentrations of 0.003?mM AgNO3 and a Cd(CH3COO)2·2H2O anion to make solution 1 and 2.27?g Se powder and 0.6?M Na2SO3 were dissolved in 100?ml deionized water, solution 2. The FTO was coated with TiO2 nanoparticles and then was dipped in both solutions, which created a FTO/TiO2/CdSe:Ag+ photoanode with a thickness of 1 layer to 4 layers. The layers of the CdSe:Ag+ film show an effect on the morphology, crystalline structure, optical properties, and photovoltaic through optical and photovoltaic measurements. Finally, the performance of the device based on a FTO/TiO2/CdSe:Ag+ photoanode with the different thickness increased significantly to exactly 3.96%. Moreover, in the pattern of an explanation of the optical and photovoltaic properties of materials, we use Tauc’s theory to determine the band gap, the conduction band, and the valence band.