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首页> 外文期刊>IEICE Electronics Express >A highly linear 10 Gb/s MOS current mode logic driver with large output voltage swing based on an active inductor
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A highly linear 10 Gb/s MOS current mode logic driver with large output voltage swing based on an active inductor

机译:具有大输出电压摆动的高度线性10 GB / S MOS电流模式逻辑驱动器,基于有源电感器

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This letter proposes a MOS-current-mode-logic (MCML) driver with an active inductor structure to provide large voltage swing with linear response. This design is implemented in 45 nm CMOS with 1.2V supply. Compared with conventional active-inductor-based circuits, this topology enlarges the available single-ended output voltage swing from less than 350 mV to 600 mV. The MCML driver occupies a chip area of 0.0264 mm2. Operating at 10 Gb/s over a channel with 3.5 dB loss at 5 GHz, the eye height is measured as 351 mV with 600 mV single-ended voltage swing, and the peak-to-peak jitter is 14.9 ps (0.149 UI).
机译:这封信提出了一种带有有源电感器结构的MOS-Current-Mode-Logic(MCML)驱动器,可以通过线性响应提供大的电压摆幅。该设计以45 nm CMOS实现,电源1.2V。与传统的主电感电感器电路相比,该拓扑结构扩大了可用的单端输出电压从小于350 mV到600 mV。 MCML驱动程序占据0.0264 mm2的芯片面积。在5 GHz的3.5 dB损耗的通道上以10 Gb / s在5 GHz上运行,眼睛高度测量为351 mV,具有600 mV单端电压摆动,峰 - 峰值抖动为14.9 ps(0.149 ui)。

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