A 30 MHz–3 GHz watt-level stacked-FET linear power amplifier

摘要

In this letter, we present a 30 MHz–3 GHz ultra-broadband GaAs stacked power amplifier (PA) fabricated in 0.15 μm pHEMT process for many applications. The implemented PA obtains 18.9 dB ± 0.9 dB flat gain by using novel input matching networks, and better than 10 dB input and output return loss. The large-signal measurements show that the output power is 30.5 dBm ± 1.2 dB at 12 dBm input power, with a peak PAE of 30% at 400 MHz. For multi-standard system usage, the broadband PA also shows good linearity when tested with two tones and long-term evolution (LTE) signal.