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A fully integrated digital LDO with voltage peak detecting and push-pull feedback loop control

机译:具有电压峰值检测和推挽式反馈环路控制的完全集成的数字LDO

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A push-pull multi-loop architecture for the digital low drop-out (D-LDO) regulators is presented with small variations of output voltage and 200 mA load capacity. The propose D-LDO adopts voltage peak detector (VPD) to observe the output voltage ripples. Once undershoot or overshoot on output voltage is detected, the push-pull feedback loop is quickly triggered, which minimizes the voltage shoots even if the load current changes abruptly. Meanwhile, the shift register (S/R) feedback loop regulates the output voltage to desired value with high accuracy. Hence the D-LDO recovers steady state with greatly small voltage spikes. The proposed D-LDO is designed and simulated in SMIC 65 nm CMOS process with a 0.42 mm2 active area. The simulated voltage overshoot and undershoot are 27 and 26 mV respectively, with load step of 20 to 200 mA with a 10-ns edge time. The max load current and quiescent current are 200 mA and 400 μA, respectively, and the peak current efficiency is 99.8%.
机译:用于数字低拔出(D-LDO)稳压器的推挽式多环架构,输出电压和200 mA负载容量的小变化。提议D-LDO采用电压峰值检测器(VPD)观察输出电压纹波。一旦检测到输出电压的下冲或过冲,即使负载电流突然变化,也会快速触发推挽式反馈回路,这使得即使负载电流也会最大限度地减少电压芽。同时,换档寄存器(S / R)反馈回路以高精度调节到所需值的输出电压。因此,D-LDO具有大量电压尖峰的稳定状态。所提出的D-LDO在SMIC 65nm CMOS工艺中设计和模拟,具有0.42mm2有源区域。模拟电压过冲和下冲分别为27和26 mV,负载步骤为20至200mA,具有10-ns边缘时间。最大负载电流和静态电流分别为200mA和400μA,峰值电流效率为99.8%。

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