Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3

摘要

We report on record electron mobility values measured in lightly Si doped homoepitaxial β-Gasub2/subOsub3/sub grown by metal-organic chemical vapor deposition. The transport properties of the films were studied using temperature-dependent Hall measurements. Numerous (010) β-Gasub2/subOsub3/sub layers grown at different conditions showed peak electron mobility exceeding 10sup4/sup cmsup2/sup/V s at low temperature (LT), with the highest value of 11 704 cmsup2/sup/V s at 46 K. The room temperature electron mobilities of the films were between 125 cmsup2/sup/V s and 160 cmsup2/sup/V s with the net background charge concentration between ～5 × 10sup15/sup cmsup?3/sup and ～2 × 10sup16/sup cmsup?3/sup. The obtained LT mobility values for β-Gasub2/subOsub3/sub were found to be comparable to or higher than the highest LT electron mobilities in bulk SiC and GaN films in the literature. The results demonstrate the capability of metalorganic chemical vapor deposition (MOCVD) for growing high quality ultrapure β-Gasub2/subOsub3/sub epitaxial films that are suitable for high power electronic device applications.