Research on the emitter thickness optimization of GaInP/GaAs/Ge triple-junction solar cell under space proton irradiation based on TCAD simulation

摘要

The degradation of GaInP/GaAs/Ge triple-junction solar cells with different GaAs sub-cell emitter thickness induced by proton irradiation is studied using numerical simulation. The degradation results of triple-junction solar cells with different GaAs emitter thickness have been investigated. The degradation mechanism induced by proton irradiation is analyzed. The results show that the short-circuit current and maximum power increase first and then decrease with the increase in GaAs sub-cell emitter thickness. The degradation of the GaAs sub-cell external quantum efficiency is greater than that of the GaInP sub-cell induced by proton irradiation. Meanwhile, the remaining external quantum efficiency of the GaAs sub-cell first increases and then decreases with the increase in emitter thickness after proton irradiation.