Two types of electric control of exchange bias (EB) by resistive switching (RS), i.e. conductive-filament-RS (type I ) and interface-barrier-RS (type II ) were observed in the Si/SiO 2 Ti/Pt/FeO x /Co/ITO multilayer devices, which were fabricated by magnetron sputtering. It is difficult for the type I device to control EB, which may be due to that the quantity of conductive filaments is not enough to modify the antiferromagnetic structure of FeO x near the Co/FeO x interface. However, the electric control of EB can be accomplished in the type II device. Compared with low-resistance-state (LRS), the exchange bias field ( H E ) increases a little but the coercivity ( H C ) increases significantly at high-resistance-state (HRS). We consider that the migration of the oxygen vacancies under different voltages is able to mediate the interfacial barrier height, leading to the bipolar RS effect and the change of EB as well. This provides a way for designing new types of spintronic devices based on electric control.
展开▼
机译:通过电阻切换(RS),即导电灯丝-RS(I型)和接口阻隔-RS(II型)在SI / SiO 2 Ti / Pt /中观察到两种类型的电动控制。 FEO X / CO / ITO多层器件,由磁控溅射制造。 I型设备难以控制EB,这可能是由于导电长丝的量不足以修改CO / FEO X接口附近FEO X的反铁磁结构。然而,可以在II型装置中完成EB的电控制。与低电阻状态(LRS)相比,交换偏置场(H E)稍微增加,但矫顽力(H C)在高阻状态(HRS)上显着增加。我们认为,在不同电压下的氧空位迁移能够介导界面屏障高度,导致双极RS效应和EB的变化。这提供了一种基于电控设计新型旋转式设备的方法。
展开▼