Excellent selector performance in engineered Ag/ZrO2:Ag/Pt structure for high-density bipolar RRAM applications

摘要

A high-performance selector with bidirectional threshold switching (TS) characteristics of Ag/ZrOsub2/sub/Pt structure was prepared by incorporating metallic Ag into the ZrOsub2/sub matrix. The bidirectional TS device exhibited excellent switching uniformity, forming-free behavior, ultra-low off current of 1 nA and adjustable selectivity (from 10sup2/sup to 10sup7/sup). The experiment results confirmed that metallic Ag clusters were penetrated into the ZrOsub2/sub matrix during the annealing process, which would function as an effective active source responsible for the bidirectional TS. The volatile behavior could be explained by the self-dissolution of unstable filaments caused by minimization of the interfacial energy and thermal effect. Furthermore, a bipolar-type one selector-one resistor (1S-1R) memory device was successfully fabricated and exhibited significant suppression of the undesired sneak current, indicating the great potential as selector in a cross-point array.