Transition from rectification to resistive-switching in Ti/MgF2/Pt memory

摘要

Magnesium fluoride is a promising candidate for resistive-switching random access memory (RRAM) with biodegradable property. However, the underlying resistive-switching (RS) mechanism and conduction mechanism in MgFsub2/sub material is still not fully studied, which limits the further performance optimization. In this work, we have demonstrated the rectification and bipolar RS behaviors in Ti/MgFsub2/sub/Pt device. The un-Formed device exhibits stable rectifying characteristics, with a rectifying ratio of ～10sup3/sup at ±3 V. Furthermore, transition from rectification mode to RS behavior can be achieved by a Forming process. Then the analogue switching properties with high uniformity was obtained with quasi-DC sweeps, and gradual modulation of multi-state was further realized. At last, the conduction and switching mechanism was discussed.