首页> 外文期刊>Advances in Biological Chemistry >Stability Behaviour of Monolayer Tetraether Lipids on the Amino-Silanised Silicon Wafer: Comparative Study between Langmuir-Blodgett Monolayers with Self-Assembled Monolayers
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Stability Behaviour of Monolayer Tetraether Lipids on the Amino-Silanised Silicon Wafer: Comparative Study between Langmuir-Blodgett Monolayers with Self-Assembled Monolayers

机译:单层四醚脂质对氨基硅烷化硅晶片的稳定性行为:Langmuir-Blodgett单层与自组装单层的比较研究

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摘要

This study investigated the stability behaviour of molecular monolayer symmetric chemically modified tetraether lipids caldarchaeol-PO_4 on the amino-silanised silicon wafer using Langmuir-Blodgett films, Self Assembling Monolayers (SAMs), ellipsometry, and atomic force microscopy (AFM). The monolayers of caldarchaeol-PO_4 were stable on the solid surface amino-silanised silicon wafer. The organizations of molecular monolayers caldarchaeol-PO_4 by Langmuir-Blodgett method and SAMs have been analyzed. The surface of pressure in Langmuir-Blodgett processing is carried out monolayers caldarchaeol-PO_4 more flat island inhomogeneous. Another method of monolayers caldarchaeol-PO_4 by SAMs is showed a large flat domain. Monolayers caldarchaeol-PO_4 by Langmuir-Blodgett method seems to be stable and chemically resistant after washing with organic solvent and an additional treatment ultrasonification with various thickness lipids arround 2 nm to 6 nm. Conversely, monolayer caldarchaeol-PO_4 by SAMs appears fewer than monolayers caldarchaeol-PO_4 by Langmuir-Blodgett method, the thickness of various from 1 nm to 3 nm.
机译:本研究研究了使用Langmuir-Blodgett薄膜,自组装单层(SAMS),椭圆形和原子力显微镜(AFM)对氨基硅烷化硅晶片上的分子单层对称化学改性四氧化醚脂质Caldarchaeol-Po_4的稳定性。 Caldarchaeol-Po_4的单层在固体表面氨基硅烷化硅晶片上稳定。已经分析了Langmuir-Blodgett方法和SAM的分子单层Caldarchaeol-Po_4的组织。在朗米尔 - Blodgett加工中的压力表面进行单层Caldarchaeol-Po_4更多的扁平岛不均匀。由SAMS的单层Caldarchaeol-Po_4的另一种方法显示出大型平面域。通过朗米尔 - Blodgett方法的单层Caldarchaeol-Po_4似乎是在用有机溶剂洗涤后稳定和化学耐化学,并且具有各种厚度脂质箭头2nm至6nm的额外处理超声。相反,Sams的Monolayer Caldarchaeol-Po_4似乎少于单层Caldarchaeol-Po_4,由Langmuir-Blodgett方法,厚度为1nm至3nm。

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