Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets

摘要

Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p‐Si/V‐doped‐ferroelectric‐ZnO 2D nanosheets (FESZ‐PD) is fabricated, and the ferroelectricity‐enhanced piezo‐phototronic effect on the photoresponse behavior of the FESZ‐PD is carefully investigated. By introducing the ferroelectricity and the piezo‐phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo‐phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without ferroelectricity under strain‐free conditions, the photoresponsivity R of the FESZ‐PD increases by 2.4 times when applying a ?0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the ferroelectricity with the piezo‐phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high‐performance electronic and optoelectronic devices.