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首页> 外文期刊>Acta Chimica Slovenica >Magnetic, Photoluminescent and Semiconductor Properties of a 4f-5d Bromide Compound
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Magnetic, Photoluminescent and Semiconductor Properties of a 4f-5d Bromide Compound

机译:4F-5D溴化物化合物的磁性,光致发光和半导体性能

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A novel 4 f – 5 d material (HgDy 6 Br 12 )Hg 8 Br 24 ( 1 ) is prepared by hydrothermal reactions and structurally characterized by single crystal X-ray diffraction. Compound 1 is characterized by a two-dimensional (2 D ) layered structure. A photoluminescence measurement with solid-state samples shows that this compound exhibits a strong emission in the blue region. A narrow optical band gap of 1.97 eV is revealed by a solid-state UV/Vis diffuse reflectance spectrum. The variable-temperature magnetic susceptibility obeys the Curie-Weiss law ( c m = c /( T – q )) with C = 0.78 K and a Weiss constant θ = – 0.38 K as revealed by the magnetic measurements, suggesting the existence of an antiferromagnetic interaction.
机译:通过水热反应制备新的4 F - 5 D材料(HGDY 6 BR 12)HG 8 BR 24(1),并通过单晶X射线衍射进行结构形式。化合物1的特征在于二维(2d)层状结构。用固态样品的光致发光测量表明该化合物在蓝色区域显示出强烈的发射。通过固态UV / VI扩散反射光谱揭示了1.97eV的窄光带隙。可变温度磁化率遵守C = 0.78 k的CURIE-Weiss Law(CM = C /(T-Q)),磁力测量透露的卫生常数θ= - 0.38克,表明反铁磁体的存在相互作用。

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