Junction edge passivation study of silicon surface barrier detectors using organic films deposited by La??B technique

摘要

A new technique to passivate silicon surfaces using SnO$_2$ films, produced by decomposing organic films of the octadecylaminea??stannate complex, deposited by the Langmuira??Blodgett (La??B) technique, has been attempted to fabricate silicon surface barrier detectors. This method of passivation is relatively simpler and can be carried out at a much lower temperature as compared to the usual passivation method of the silicon surface by growing the SiO$_2$ layer on it. Also, the passivating layer of SnO$_2$ produced in this new method has a good shelf-life. The detectors fabricated with a passivating layer of SnO$_2$ were subsequently tested for $I $a??$V$, alpha spectrum and long-term performance.