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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Direct growth of high quality 2D materials-based metal-semiconductor-metal photodiodes
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APS -APS March Meeting 2017 - Event - Direct growth of high quality 2D materials-based metal-semiconductor-metal photodiodes

机译:APS -APS 3月举行2017年 - 事件 - 基于高质量的2D材料的直接增长基于基于材料的金属半导体 - 金属光电二极管

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摘要

Metal-semiconductor-metal photodiodes fabricated using a scalable method, where lithographically defined interdigitated electrodes of bulk molybdenum serve as the growth template for producing self-contacted, as-grown two-dimensional (2D) materials-based devices will be presented. Measurements of first generation devices show photo responsivity of extasciitilde 1 A/W at a source-drain voltage of 1.5 V, which is a few orders of magnitude larger than the values reported under similar measurement conditions. Time resolved measurements show fast responses on the order of extasciitilde 25 us, faster than previously reported values by a factor of three. We will present details on the device growth and characterization including the most current results after optimization. We will also discuss the effects of various processing and passivation techniques on the performance. This original process, using bulk metallic patterns, results in as-grown, self-forming, electrical contact to the monolayer material, providing a simple, scalable, and reproducible method for creating as-grown two-dimensional materials-based devices with broad implications for basic research and industrial applications.
机译:使用可伸缩方法制造的金属 - 半导体 - 金属光电二极管,其中散装钼的光刻定义的散装电极用作用于制造自接触的生长模板,呈现出生长的二维(2D)基于基于材料的装置。第一代器件的测量显示Extasciitide 1A / W处于1.5V的遥漏电压的照片响应度,这是比在类似测量条件下报告的值大的数量级。定期定位测量显示extasciitilde 25 US的顺序快速响应,比以前报告的值快三倍。我们将在优化后提出有关设备增长和表征的详细信息,包括最新的结果。我们还将讨论各种加工和钝化技术对性能的影响。这种原始工艺,使用散装金属图案,导致易生长,自成形,电接触到单层材料,提供一种简单,可扩展,可再现的方法,用于创建基于生长的二维材料的设备,具有广泛的含义用于基础研究和工业应用。

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