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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Electronic, magnetic, and optical properties of Semiconducting Spinel Fe$_{mathrm{2}}$CrO$_{mathrm{4}}$
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APS -APS March Meeting 2017 - Event - Electronic, magnetic, and optical properties of Semiconducting Spinel Fe$_{mathrm{2}}$CrO$_{mathrm{4}}$

机译:APS -APS 3月会议2017 - Event - 电子,磁性和半导体尖晶石Fe $ _ {Mathrm {2}} $ CRO $ _ {MATHRM {4}} $

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摘要

Transition metal oxides offer significant flexibility in tailoring functional properties by virtue of the high degree of solid solubility of different cations within the host lattice. For instance, the electronic properties of magnetite (Fe$_{mathrm{3}}$O$_{mathrm{4}})$, a ferrimagnetic half metal, can be substantially changed by substituting one third of the Fe cations with Mn, Ni, Co, Zn or Mg. The actual magnetic properties of any given ferrite depend critically on whether the dopant occupies the tetrahedral (A) or octahedral (B) sites, or a mix of the two. Doping magnetite to produce a ferromagnetic semiconductor would be of considerable interest for spintronics and photocatalysis, particularly if the bandgap remains small. The detailed functional properties depend on the local structure, which is dictated in large measure by the cation sublattice(s) the dopants occupy, the valence(s) they exhibit, and the relative energy scales of competing effects, including short-range disorder, that determine the overall electronic structure. We have investigated Cr as the dopant in Fe$_{mathrm{3}}$O$_{mathrm{4}}$ by carrying out epitaxial film growth by molecular beam epitaxy and characterization, along with first principles modeling to explore new model materials. We find that replacing 1/3 of the Fe atoms with Cr atoms results in a low-gap, thermally robust ferrimagnetic semiconductor that is photoconductive in the visible, whereas replacing 2/3 of the Fe with Cr produces an insulator with no net magnetization.
机译:过渡金属氧化物在载体晶格内不同阳离子的高度固体溶解度纵向具有显着的功能性。例如,磁铁矿的电子特性(FE $ _ {MATHRM {MATHRM {MATHRM {MATHRM {3})$ O $ _ {MATHRM {4}})$,可以通过用MN的FE阳离子代替三分之一的FE阳离子来显着改变,ni,co,zn或mg。任何给定铁氧体的实际磁性均致力于掺杂剂是否占据四面体(A)或八面体(B)位点,或两种混合物。掺杂磁铁矿生产铁磁半导体对于闪光和光催化是相当大的兴趣,特别是如果带隙保持很小。详细的功能性质取决于局部结构,其在阳离子占据掺杂剂占据的大量措施中,它们表现出的价值和竞争效应的相对能量尺度,包括短程障碍,确定整体电子结构。通过通过分子束外延和表征进行外延薄膜生长,我们调查了CR作为FE $ _ {mathrm {3}} $ O $ _ {mathrm {mathrm {4}} $。与探索新模型的第一个原则材料。我们发现用CR原子取代1/3的Fe原子导致低间隙,热鲁棒的铁磁性半导体在可见中是光电导的,而用Cr替换2/3的Fe产生没有净磁化的绝缘体。

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