首页> 外文期刊>The journal of immunology >Apoptotic Programs Are Determined during Lineage Commitment of CD4+ T Effectors: Selective Regulation of T Effector-Memory Apoptosis by Inducible Nitric Oxide Synthase
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Apoptotic Programs Are Determined during Lineage Commitment of CD4+ T Effectors: Selective Regulation of T Effector-Memory Apoptosis by Inducible Nitric Oxide Synthase

机译:在CD4 + T效应器的谱系中确定凋亡程序:通过诱导型一氧化氮合酶选择性调节T效应记忆凋亡

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Lineage-committed T effectors generated in response to Ag during the inflammatory phase are destined to die during termination of the immune response. We present evidence to suggest that molecular signatures of lineage commitment are reflected in apoptotic cascades activated in CD4+ T effectors. Exemplifying this, ablation of inducible NO synthase (iNOS) protected effector-memory T (TEM) cells, but not TNaive or central-memory T cells, activated in vitro, from apoptosis triggered by cytokine deprivation. Furthermore, attrition of T effectors generated in the secondary, but not the primary, response to Ag was substantially reduced in mice, which received iNOS inhibitors. Distinct patterns of iNOS expression were revealed in wild-type TEM effectors undergoing apoptosis, and ablation of iNOS protein in primary and TEM wild-type effectors confirmed observations made in iNOS ?/? cells. Describing molecular correlates of this dependence, mitochondrial damage, activation of the protein Bax, and release from mitochondria of the apoptosis-inducing factor were selectively abrogated in iNOS ?/? TEM effectors. Suggesting that iNOS dependence was linked to the functional identity of T cell subsets, both iNOS induction and apoptosis were compromised in IFN-γ ?/? TEM effectors, which mirrored the response patterns of iNOS ? / ? TEM. Collectively, these observations suggest that programs regulating deletion and differentiation are closely integrated and likely encoded during lineage commitment of T effectors.
机译:在炎症期期间,响应于AG的谱系产生的T效应在免疫应答终止期间注射死亡。我们提出了证据表明谱系承诺的分子签名反映在CD4 + T效应中激活的凋亡级联中。举例说明这一点,诱导诱导的诱导酶(InOS)的诱导效应记忆 - 存储器T(TEM)细胞,但不是在体外激活的TNAIVE或中央存储器T细胞,由细胞因子剥夺引发的凋亡。此外,在二次中产生的T效应的磨损,但不是初级,对Ag的响应基本上减少,在小鼠中,其接受InOS抑制剂。在经历凋亡的野生型TEM效应器中显示了InOS表达的明显模式,并在初级和TEM野生型效应器中消融InOS蛋白质确认了Inos中的观察结果?/?细胞。描述这种依赖性,线粒体损伤,蛋白质杀死的激活的分子相关性,以及从细胞凋亡诱导因子的线粒体释放的蛋白质中的释放是在Inos中的?/? TEM效果。表明Inos依赖性与T细胞亚群的功能性相连,InOS诱导和细胞凋亡均在IFN-γ中受到损害?/? TEM效果,镜像INOS的响应模式? /? TEM。总的来说,这些观察结果表明,调节删除和分化的程序紧密集成和可能在血统对T效差的承诺期间编码。

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