Graphene/semi-insulating single crystal CdTe Schottky-type heterojunction X- and γ-Ray Radiation Detectors

摘要

We developed a new concept of X- and γ-ray radiation semiconductor detectors based on a largearea graphene/semi-insulating single crystal CdTe Schottky-type heterojunction. These two terminalelectronic devices can be easily fabricated by forming a Van der Waals contact between large areachemical vapor deposited graphene and CdTe substrates in air and at room temperature. This approachsignifcantly reduces the fabrication cost and improves the reproducibility and stability of electricalproperties. A detailed analysis of their AC and DC electrical properties was carried out in order todetermine the width of the space charge region and dominant charge transport mechanisms atreverse bias. The unoptimized graphene/CdTe heterojunction detectors exhibited a promising spectralresolution of 241Am (59keV) and 137Cs (662keV) isotope radiation at room temperature.