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Crystal, magnetic, and electronic structures, and properties of new BaMnPnF (Pn = As, Sb, Bi)

机译:新型BaMn Pn F( Pn = As,Sb,Bi)的晶体,磁性和电子结构以及性质

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New BaMn Pn F ( Pn = As, Sb, Bi) are synthesized by stoichiometric reaction of elements with BaF2. They crystallize in the P 4/ nmm space group, with the ZrCuSiAs-type structure, as indicated by X-ray crystallography. Electrical resistivity results indicate that Pn = As, Sb, and Bi are semiconductors with band gaps of 0.73?eV, 0.48?eV and 0.003?eV (extrinsic value), respectively. Powder neutron diffraction reveals a G -type antiferromagnetic order below TN = 338(1) K for Pn = As, and below TN = 272(1) K for Pn = Sb. Magnetic susceptibility increases with temperature above 100 K for all the materials. Density functional calculations find semiconducting antiferromagnetic compounds with strong in-plane and weaker out-of-plane exchange coupling that may result in non-Curie Weiss behavior above TN . The ordered magnetic moments are 3.65(5) μ B/Mn for Pn = As, and 3.66(3) μ B/Mn for Pn = Sb at 4 K, as refined from neutron diffraction experiments.
机译:通过元素与BaF 2 的化学计量反应合成了新型BaMn Pn F(Pn = As,Sb,Bi)。 X射线晶体学表明,它们在具有ZrCuSiAs型结构的P 4 / nmm空间群中结晶。电阻率结果表明,Pn = As,Sb和Bi是带隙分别为0.73?eV,0.48?eV和0.003?eV(本征值)的半导体。粉末中子衍射揭示了Pn = As低于T N = 338(1)K且Pn低于T N = 272(1)K的G型反铁磁阶=锑对于所有材料,磁化率都随温度升高到100 K以上而增加。密度泛函计算发现面内和面外交换耦合强的半导体反铁磁化合物可能导致T N 以上的非Curie Weiss行为。当Pn = As时,有序磁矩为3.65(5)μ B / Mn,对于4n时,Pn = Sb为3.66(3)μ B / Mn。由中子衍射实验精制而成。

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