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Effect of solute atoms on dislocation motion in Mg: An electronic structure perspective

机译:溶质原子对镁中位错运动的影响:电子结构的角度

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Solution strengthening is a well-known approach to tailoring the mechanical properties of structural alloys. Ultimately, the properties of the dislocation/solute interaction are rooted in the electronic structure of the alloy. Accordingly, we compute the electronic structure associated with, and the energy barriers to dislocation cross-slip. The energy barriers so obtained can be used in the development of multiscale models for dislocation mediated plasticity. The computed electronic structure can be used to identify substitutional solutes likely to interact strongly with the dislocation. Using the example of a-type screw dislocations in Mg, we compute accurately the Peierls barrier to prismatic plane slip and argue that Y, Ca, Ti, and Zr should interact strongly with the studied dislocation, and thereby decrease the dislocation slip anisotropy in the alloy.
机译:固溶强化是定制结构合金力学性能的一种众所周知的方法。最终,位错/溶质相互作用的特性根源于合金的电子结构。因此,我们计算了与位错交叉滑动相关的电子结构以及能垒。如此获得的能垒可用于位错介导的可塑性的多尺度模型的开发。计算出的电子结构可用于识别可能与位错强烈相互作用的取代溶质。以Mg中a型螺型位错为例,我们准确地计算了对棱柱面滑移的Peierls势垒,并认为Y,Ca,Ti和Zr应该与所研究的位错强烈相互作用,从而降低了位错滑移各向异性。合金。

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