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首页> 外文期刊>Scientific reports. >Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous
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Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous

机译:几层黑磷中电可调狄拉克锥的量子约束和结构各向异性

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Two-dimensional (2D) materials are well-known to exhibit interesting phenomena due to quantum confinement. Here, we show that quantum confinement, together with structural anisotropy, result in an electric-field-tunable Dirac cone in 2D black phosphorus. Using density functional theory calculations, we find that an electric field, E e x t, applied normal to a 2D black phosphorus thin film, can reduce the direct band gap of few-layer black phosphorus, resulting in an insulator-to-metal transition at a critical field, E c . Increasing E e x t beyond E c can induce a Dirac cone in the system, provided the black phosphorus film is sufficiently thin. The electric field strength can tune the position of the Dirac cone and the Dirac-Fermi velocities, the latter being similar in magnitude to that in graphene. We show that the Dirac cone arises from an anisotropic interaction term between the frontier orbitals that are spatially separated due to the applied field, on different halves of the 2D slab. When this interaction term becomes vanishingly small for thicker films, the Dirac cone can no longer be induced. Spin-orbit coupling can gap out the Dirac cone at certain electric fields; however, a further increase in field strength reduces the spin-orbit-induced gap, eventually resulting in a topological-insulator-to-Dirac-semimetal transition.
机译:众所周知,二维(2D)材料由于量子限制而表现出有趣的现象。在这里,我们证明了量子约束以及结构各向异性导致了二维黑磷中电场可调的狄拉克锥。使用密度泛函理论计算,我们发现垂直于二维黑磷薄膜的电场E ext 可以减小几层黑磷的直接带隙,从而形成绝缘体临界场E c 的金属过渡。如果黑磷膜足够薄,则将E e x t 增加到E c 以上可以在系统中引起狄拉克锥。电场强度可以调整狄拉克锥和狄拉克-费米速度的位置,后者的大小与石墨烯中的相似。我们显示,狄拉克锥是由边界轨道之间的各向异性相互作用项引起的,该边界轨道由于所施加的场而在2D平板的不同半部上在空间上分开。当对于较厚的薄膜,该相互作用项变得很小时,狄拉克锥不再能被诱导。自旋轨道耦合可以使狄拉克锥在某些电场下脱离。然而,场强的进一步增加减小了自旋轨道引起的间隙,最终导致拓扑绝缘体到狄拉克半金属的转变。

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