Driving ferromagnetic resonance frequency of FeCoB/PZN-PT multiferroic heterostructures to Ku-band via two-step climbing: composition gradient sputtering and magnetoelectric coupling

摘要

RF/microwave soft magnetic films (SMFs) are key materials for miniaturization and multifunctionalization of monolithic microwave integrated circuits (MMICs) and their components, which demand that the SMFs should have higher self-bias ferromagnetic resonance frequency f _FMR, and can be fabricated in an IC compatible process. However, self-biased metallic SMFs working at X-band or higher frequency were rarely reported, even though there are urgent demands. In this paper, we report an IC compatible process with two-step superposition to prepare SMFs, where the FeCoB SMFs were deposited on (011) lead zinc niobate–lead titanate substrates using a composition gradient sputtering method. As a result, a giant magnetic anisotropy field of 1498?Oe, 1–2 orders of magnitude larger than that by conventional magnetic annealing method, and an ultrahigh f _FMR of up to 12.96?GHz reaching Ku-band, were obtained at zero magnetic bias field in the as-deposited films. These ultrahigh microwave performances can be attributed to the superposition of two effects: uniaxial stress induced by composition gradient and magnetoelectric coupling. This two-step superposition method paves a way for SMFs to surpass X-band by two-step or multi-step, where a variety of magnetic anisotropy field enhancing methods can be cumulated together to get higher ferromagnetic resonance frequency.