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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Scanning Tunneling Microscopy and Spectroscopy of Twisted Bilayer Graphene with Small Twist Angles
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APS -APS March Meeting 2017 - Event - Scanning Tunneling Microscopy and Spectroscopy of Twisted Bilayer Graphene with Small Twist Angles

机译:APS -APS 2017年3月会议-事件-具有小扭曲角的扭曲双层石墨烯的扫描隧道显微镜和光谱

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The electronic band structure of twisted bilayer graphene (tBLG) depends on the twist angle between the two layers. Distinct electronic features emerge when the twist angle becomes smaller than 1 degree. Here we use low temperature scanning tunneling microscopy and spectroscopy to investigate the electronic properties of tBLG for twist angles below 2 degrees. The twist angle is determined from the wavelength of the moir'{e} pattern. Density of states measurements are performed as a function of charge density which is controlled by the back gate. Different charge density dependences are observed for twist angles above and below a critical angle of about 1 degree. Moreover, spatially resolved spectroscopy mapping shows that electrons at the Fermi level become localized on the AA sites for small twist angles.
机译:扭曲的双层石墨烯(tBLG)的电子能带结构取决于两层之间的扭曲角。当扭转角小于1度时,就会出现明显的电子特征。在这里,我们使用低温扫描隧道显微镜和光谱学研究扭转角小于2度的tBLG的电子性能。扭转角由莫尔条纹图案的波长确定。根据背栅控制的电荷密度执行状态密度测量。对于在大约1度的临界角之上和之下的扭转角观察到不同的电荷密度依赖性。此外,空间分辨光谱图显示,费米能级的电子以较小的扭转角定位在AA位置。

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