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APS -APS March Meeting 2017 - Event - Observation of a macroscopic topological insulator phase in an assembly of coupled topological insulator nanocrystals

机译:APS -APS 2017年3月会议-活动-耦合拓扑绝缘体纳米晶体组装体中宏观拓扑绝缘体相的观察

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We study an assembly of tunnel coupled topological insulator (TI) nanocrystals. We demonstrate experimentally that a macroscopic topological insulator phase can emerge in this system. Electrical transport measurements on thin films of Bi$_2$Se$_3$ nanocrystals reveal the presence of decoupled top and bottom topological surface states above a certain film thickness. The surface state penetration depth is found to be unusually large, $sim$ 30nm at 2K, and decreases with increasing temperature. For samples with low film thickness, we observe deviations of the surface state Berry phase from $pi$ due to hybridization of opposite surface states. This weakens the effective spin-orbit coupling field to as low as $sim$ 30T at 2K. Remarkably, the topological insulating behavior becomes more pronouncedwith increasing temperature. Our work exhibits a model TI that is distinct from bulk/single crystal TIs and also displays phenomena that are expected, but normally not accessible in the latter systems.
机译:我们研究了隧道耦合拓扑绝缘体(TI)纳米晶体的组装。我们通过实验证明,在该系统中可以出现宏观拓扑绝缘体相。对Bi $ _2 $ Se $ _3 $纳米晶体薄膜的电输运测量表明,在一定膜厚度以上,顶部和底部拓扑表面状态相互分离。发现表面状态穿透深度异常大,在2K时约为30nm,并且随着温度的升高而降低。对于低膜厚的样品,我们观察到由于相反表面状态的杂交,表面状态Berry相偏离了ppi。这使有效自旋轨道耦合场在2K时低至$ sim $ 30T。值得注意的是,随着温度的升高,拓扑绝缘行为变得更加明显。我们的工作展示了不同于体晶/单晶TI的模型TI,并且还显示了预期的现象,但通常在后者的系统中无法访问。

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