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APS -APS March Meeting 2017 - Event - Nuclear demagnetisation cooling of a nanoelectronic device

机译:APS -APS March Meeting 2017-活动-纳米电子设备的核退磁冷却

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We present a new technique for on-chip cooling of electrons in a nanostructure: nuclear demagnetisation of on-chip, thin-film copper refrigerant. We are motivated by the potential improvement in the operation of nanoelectronic devices below $10~mathrm{mK}$. At these temperatures, weak electron-phonon coupling hinders traditional cooling, yet here gives the advantage of thermal isolation between the environment and the on-chip electrons, enabling cooling significantly below the base temperature of the host lattice. To demonstrate this we electroplate copper onto the metallic islands of a Coulomb blockade thermometer (CBT), and hence provide a direct thermal link between the cooled copper nuclei and the device electrons. The CBT provides primary thermometry of its internal electron temperature, and we use this to monitor the cooling. Using an optimised demagnetisation profile we observe the electrons being cooled from $9~mathrm{mK}$ to $4.5~mathrm{mK}$, and remaining below $5~mathrm{mK}$ for an experimentally useful time of 1200 seconds. We also suggest how this technique can be used to achieve sub-$1~mathrm{mK}$ electron temperatures without the use of elaborate bulk demagnetisation stages.[1] Bradley et al., arXiv:1611.02483 (2016)
机译:我们提出了一种用于纳米结构中电子的片上冷却的新技术:片上薄膜铜制冷剂的核退磁。低于$ 10〜mathrm {mK} $的纳米电子器件的运行潜力得到了改善,我们对此感到鼓舞。在这样的温度下,弱的电子-声子耦合会阻碍传统的冷却,但此处却具有环境与片上电子之间热隔离的优势,从而可将温度大大降低至低于主晶格的基础温度。为了证明这一点,我们将铜电镀到了库仑封锁温度计(CBT)的金属岛上,从而在冷却的铜核和器件电子之间提供了直接的热连接。 CBT提供了内部电子温度的主要测温法,我们使用它来监控冷却。使用优化的退磁曲线,我们观察到电子从$ 9〜mathm {mK} $冷却到$ 4.5〜mathrm {mK} $,并在低于$ 5〜mathrm {mK} $的条件下保持1200秒的实验有用时间。我们还建议,如何在不使用复杂的大量退磁步骤的情况下,将该技术用于实现低于$ 1〜mathrm {mK} $的电子温度。[1] Bradley等,arXiv:1611.02483(2016)

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