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Electronic and transport properties of zigzag phosphorene nanoribbons with nonmetallic atom terminations

机译:具有非金属原子终端的之字形磷光纳米带的电子和输运性质

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Using the first-principles method based on density-functional theory and nonequilibrium Green's function, electronic properties of zigzag phosphorene nanoribbons (ZPNRs) terminated with nonmetallic (NM) atoms such as H, C, F, N, O, S and Si, as well as a pristine case, are studied systematically. Three possible cases are considered, namely, ZPNRs with symmetrical edge terminations, asymmetrical edge terminations, and the half-bare edge case. It is shown that the pristine ZPNRs show metallic behavior. For ZPNRs terminated with C, O, S and Si atoms, they are always metals regardless of the termination cases. For ZPNR terminated with H, F, and N, the electronic structure is either a metal or a semiconductor, which depends on the termination cases. The results from the calculated edge formation energy show that the ribbons with C, F, N, O, S and Si atom edge modifications are more stable than the H-terminated ZPNR. Moreover, an applied external transverse electric field can effectively modulate the bandgaps of ZPNRs terminated with H, F and N, especially reducing the gap with the increase of the applied external transverse electric field strength. The ZPNRs terminated with N undergo a semiconductor-to-metal transition. We also investigate the electronic transport properties in nano devices consisting of the ZPNRs terminated respectively by O and S at both edges and with the fully bare edge. It is found that O and S terminated ZPNR devices have a good linear response on bias, and the current is bigger than the pristine case. The results indicate that the introduction of NM atoms at the edge(s) can effectively modulate the electronic and transport properties of ZPNRs. These novel electronic properties suggest that PNRs are a promising candidate for future nanoelectronic and optoelectronic applications.
机译:使用基于密度泛函理论和非平衡格林函数的第一原理方法,以H,C,F,N,O,S和Si等非金属(NM)原子终止的之字形磷烯纳米带(ZPNR)的电子性质为以及原始案例,进行了系统的研究。考虑了三种可能的情况,即具有对称边缘端接的ZPNR,非对称边缘端接和半裸边缘情况。结果表明,原始的ZPNR具有金属行为。对于以C,O,S和Si原子封端的ZPNR,无论封端情况如何,它们始终是金属。对于以H,F和N端接的ZPNR,电子结构是金属或半导体,具体取决于端接情况。计算出的边缘形成能的结果表明,具有C,F,N,O,S和Si原子边缘修饰的碳带比H端基ZPNR更稳定。而且,施加的外部横向电场可以有效地调制以H,F和N终止的ZPNR的带隙,尤其是随着施加的外部横向电场强度的增加而减小间隙。以N终止的ZPNR经历了半导体到金属的转变。我们还研究了由ZPNR组成的纳米器件的电子传输性能,这些ZPNR分别在两个边缘和完全裸露的边缘分别被O和S终止。发现以O和S端接的ZPNR器件对偏置具有良好的线性响应,并且电流大于原始情况。结果表明,在边缘引入NM原子可以有效地调节ZPNR的电子和传输性能。这些新颖的电子特性表明,PNR是未来纳米电子和光电应用的有前途的候选者。

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