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The role of cobalt doping in tuning the band gap, surface morphology and third-order optical nonlinearities of ZnO nanostructures for NLO device applications

机译:钴掺杂在调整NLO器件应用中ZnO纳米结构的带隙,表面形态和三阶光学非线性方面的作用

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摘要

The work presented here reported the effect of doping cobalt (Co) in ZnO thin films. The thin films were prepared using the spray pyrolysis technique with 0, 1, 5 and 10 wt% cobalt doping concentrations to study the morphological, optical and third-order nonlinear optical (NLO) properties. X-ray diffraction revealed the crystalline nature of the prepared thin films, and the crystallite size was found to increase with the concentration of doped Co. The morphology and surface topography of the films were largely influenced by doping, as indicated by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). With an increase in Co-doping concentration, the direct optical energy band-gap value increased from 3.21 eV to 3.45 eV for pure to 10 at% of Co concentrations respectively. To study the NLO properties of the prepared thin films, the Z-scan technique was adopted; it was observed that with an increase in the doping concentration from 0 to 10 wt%, the nonlinear absorption coefficient ( β ) was enhanced from 4.68 × 10 ~(?3) to 9.92 × 10 ~(?3) (cm W ~(?1) ), the nonlinear refractive index ( n _(2) ) increased from 1.37 × 10 ~(?8) to 2.90 × 10 ~(?8) (cm ~(2) W ~(?1) ), and the third-order NLO susceptibility ( χ ~((3)) ) values also increased from 0.79 × 10 ~(?6) to 1.88 × 10 ~(?6) (esu). At the experimental wavelength, the optical limiting (OL) features of the prepared films were explored, and the limiting thresholds were calculated. The encouraging results of the NLO studies suggest that the Co?:?ZnO thin film is a capable and promising material for nonlinear optical devices and optical power limiting applications.
机译:本文介绍的工作报告了在ZnO薄膜中掺杂钴(Co)的效果。使用喷雾热解技术,以0、1、5和10 wt%的钴掺杂浓度制备薄膜,以研究形态,光学和三阶非线性光学(NLO)特性。 X射线衍射揭示了所制备薄膜的晶体性质,并且发现微晶尺寸随掺杂Co的浓度而增加。掺杂的影响薄膜的形态和表面形貌,如场发射扫描电子所表明的那样。显微镜(FESEM)和原子力显微镜(AFM)。随着Co掺杂浓度的增加,对于纯Co浓度到10 at%的Co浓度,直接光能带隙值分别从3.21 eV增加到3.45 eV。为了研究所制备薄膜的NLO特性,采用了Z扫描技术。观察到随着掺杂浓度从0到10 wt%的增加,非线性吸收系数(β)从4.68×10〜(?3)增加到9.92×10〜(?3)(cm W〜( λ1)),非线性折射率(n _(2))从1.37×10〜(?8)增加到2.90×10〜(?8)(cm〜(2)W〜(?1)),并且三阶NLO敏感性(χ〜((3)))值也从0.79×10〜(?6)增加到1.88×10〜(?6)(esu)。在实验波长下,探索了所制备薄膜的光学极限(OL)特征,并计算了极限阈值。 NLO研究的令人鼓舞的结果表明,Co 2:ZnO薄膜是一种用于非线性光学器件和光功率限制应用的有能力且有希望的材料。

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