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Bismuth film electrode and chloranilic acid as a new alternative for simple, fast and sensitive Ge(iv) quantification by adsorptive stripping voltammetry

机译:铋膜电极和氯苯甲酸作为吸附溶出伏安法简单,快速和灵敏地定量Ge(iv)的新选择

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摘要

An analytical procedure regarding the voltammetric determination of germanium( IV ) by adsorptive stripping voltammetry (AdSV) exploiting the in situ plated bismuth film electrode (BiFE) is described. The use of mercury free electrode as a working electrode is the first time proposed in AdSV germanium determination. The method is based on adsorptive accumulation of the Ge( IV )–chloranilic acid complex at a BiFE by a nonelectrochemical process followed by the cathodic stripping step. Experimental variables, including bismuth and chloranilic acid concentrations, deposition potential and time were carefully optimized. Under optimized conditions the cathodic stripping peak current was directly proportional to the concentration of Ge( IV ) in the range from 3 × 10 ~(?9) to 1.5 × 10 ~(?7) mol L ~(?1) with the correlation coefficient 0.997. Because the AdSV technique could be invalidated due to real samples matrix the influence of foreign ions, surface active substances, and humic substances on the Ge( IV ) signal was precisely examined. The satisfying minimization of potential matrix interferences was also suggested. Analytical results of natural water samples analysis showed that the proposed procedure of trace germanium( IV ) determination is suitable for direct environmental water analysis.
机译:描述了一种利用原位镀铋薄膜电极(BiFE)通过吸附溶出伏安法(AdSV)伏安法测定锗(IV)的分析程序。在AdSV锗测定中首次提出使用无汞电极作为工作电极。该方法基于通过非电化学方法在BiFE上吸附Ge(IV)-氯苯甲酸络合物,然后进行阴极剥离步骤。仔细优化了实验变量,包括铋和氯苯甲酸的浓度,沉积电位和时间。在最佳条件下,阴极溶出峰电流与Ge(IV)的浓度成正比,范围为3×10〜(?9)至1.5×10〜(?7)mol L〜(?1)系数0.997。由于实际样本矩阵可能使AdSV技术无效,因此精确检查了外来离子,表面活性物质和腐殖质对Ge(IV)信号的影响。还建议将潜在的矩阵干扰最小化。天然水样分析的分析结果表明,所提出的痕量锗(IV)测定方法适用于直接环境水分析。

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