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First-principles study of thermoelectric properties of Mg2Si–Mg2Pb semiconductor materials

机译:Mg2Si–Mg2Pb半导体材料热电特性的第一性原理研究

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Mg _(2) X ~(IV) (X ~(IV) = Si, Ge, Sn) compounds are semiconductors and their solid solutions are believed to be promising mid-temperature thermoelectric materials. By contrast, Mg _(2) Pb is a metal and few studies have been conducted to investigate the thermoelectric properties of Mg _(2) Si–Mg _(2) Pb solid solutions. Here, we present a theoretical study exploring whether Mg _(2) Pb–Mg _(2) Si solid solutions can be used as thermoelectric materials or not. We firstly constructed several Mg _(2) Si _(1? x ) Pb _( x ) (0 ≤ x ≤ 1) structures and calculated their electronic structures. It is suggested that Mg _(2) Si _(1? x ) Pb _( x ) are potential thermoelectric semiconductors in the range of 0 ≤ x ≤ 0.25. We then explicitly computed the electron relaxation time and both the electronic and lattice thermal conductivities of Mg _(2) Si _(1? x ) Pb _( x ) (0 ≤ x ≤ 0.25) and studied the effect of Pb concentration on the Seebeck coefficient, electrical conductivity, thermal conductivity, and thermoelectric figure of merit ( ZT ). At low Pb concentration ( x = 1/16), the ZT of the Mg _(2) Si _(1? x ) Pb _( x ) solid solutions (up to 0.67 at 900 K) reaches a maximum and is much higher than that of Mg _(2) Si.
机译:Mg_(2)X〜(IV)(X〜(IV)= Si,Ge,Sn)化合物是半导体,其固溶体被认为是有前途的中温热电材料。相比之下,Mg _(2)Pb是金属,很少进行研究以研究Mg _(2)Si–Mg _(2)Pb固溶体的热电性能。在这里,我们提出了一项理论研究,探讨了Mg _(2)Pb–Mg _(2)Si固溶体是否可用作热电材料。我们首先构造了几个Mg _(2)Si _(1?x)Pb _(x)(0≤x≤1)结构,并计算了它们的电子结构。建议Mg _(2)Si _(1?x)Pb _(x)是在0≤x≤0.25范围内的潜在热电半导体。然后,我们明确计算出Mg _(2)Si _(1?x)Pb _(x)(0≤x≤0.25)的电子弛豫时间以及电子和晶格热导率,并研究了Pb浓度对Pb浓度的影响。塞贝克系数,电导率,热导率和热电因数(ZT)。在低Pb浓度(x = 1/16)下,Mg _(2)Si _(1?x)Pb _(x)固溶体的ZT(在900 K时高达0.67)达到最大值,并且更高比Mg _(2)Si高。

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