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Field-driven single domain wall motion in ferromagnetic nanowires

机译:铁磁纳米线中的场驱动单畴壁运动

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We present a Lorentz microscopy study of polycrystalline permalloy 2D nanostructures with a thickness of 20 nm. Each structure was designed as a single domain wall trap. The trap comprises two horizontal nanowires with an in-plane dimension of 200 × 1000 nm ~(2) , and three tilted pads with different shapes. These structures allow us to create head-to-head domain walls, and these created walls can propagate in the structures by an external magnetic field. These designed traps were simulated using the micro-magnetic OOMMF simulation software. Those nanostructures were also patterned using electron beam lithography and focussed-ion beam techniques. This aims to determine the geometric parameters required to propagate a single magnetic domain wall in these structures reproducibly. Among the studied structures with one and two field directions, we found that the motion of a domain wall can be reproducibly driven by two alternative field directions in a trap which consists of the two horizontal nanowires and three 90°-tilted ones. We investigated systematically the viability of both single field and sequential switching of two field directions. Lorentz microscopy and micro-magnetic simulation results indicate that the propagation of a domain wall is strongly affected by the precise shape of the corner sections linking the trap elements, and the angles of the horizontal nanowires and tilted pads. Domain wall pinning and transformation of wall chirality are strongly correlated to the trap geometries. Our results are vital to design an optimal trap which supports a reproducible domain wall motion. This might also support a greater understanding of domain wall creation and propagation in magnetic nanowires which are of interest for concepts of high-density and ultrafast nonvolatile data storage devices, including racetrack memory and magnetic logic gates.
机译:我们目前对厚度为20 nm的多晶坡莫合金2D纳米结构进行Lorentz显微镜研究。每个结构被设计为单个畴壁陷阱。陷阱包含两条平面内尺寸为200×1000 nm〜(2)的水平纳米线,以及三个具有不同形状的倾斜焊盘。这些结构允许我们创建头对头磁畴壁,并且这些创建的壁可以通过外部磁场在结构中传播。使用微磁OOMMF模拟软件对这些设计的陷阱进行了模拟。这些纳米结构也使用电子束光刻和聚焦离子束技术进行了图案化。这旨在确定在这些结构中可复制地传播单个磁畴壁所需的几何参数。在研究的具有一个和两个场方向的结构中,我们发现畴壁的运动可以由两个水平纳米线和三个90°倾斜的纳米线组成的阱中的两个可选场方向可复制地驱动。我们系统地研究了单场和两个场方向顺序切换的可行性。洛伦兹显微镜和微磁模拟结果表明,畴壁的传播受到连接陷阱元件的角部分的精确形状以及水平纳米线和倾斜焊盘的角度的强烈影响。畴壁的钉扎和壁手性的转变与陷阱的几何形状密切相关。我们的结果对于设计支持可重现的畴壁运动的最佳阱至关重要。这也可能支持对磁性纳米线中畴壁的产生和传播有更深入的了解,这对于包括赛道存储器和磁性逻辑门在内的高密度和超快非易失性数据存储设备的概念很重要。

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