Investigation into Co and Ga2O3 co-doped ZnSe chalcogenide composite semiconductor thin films fabricated using PLD

摘要

(Ga _(2) O _(3) ) _(0.1) (Co) _(0.5) (ZnSe) _(0.4) thin films were fabricated via PLD at different pressures and substrate temperatures. The influence of different preparation conditions on the thin films was deeply explored through investigating the structural, optical and electromagnetic properties, and surface morphologies. The thicknesses of the thin films were greatly affected by the preparation conditions. The poor light transmittance of the thin films under conditions of 4 Pa and 600 °C was revealed through refractive index measurements. The stable amorphous structure was confirmed via XRD. The optimum preparation conditions, room temperature, 800 °C and 10 Pa, were reflected in the transmission spectra. Greater energy transfer between each of the energy levels and more activity under the temperature conditions used were indicated through PL spectra. The lower resistivity and higher carrier concentration in the quartz substrate were shown in the results of Hall effect measurements. The significant impact of high temperature preparation conditions on the thin films was visualised using AFM. All of the results indicated that the properties of the thin films are significantly influenced by the preparation conditions. Furthermore, a semiconductor chalcogenide material with excellent optical and electromagnetic properties was proposed in this investigation.