Growth and Micro Structural Characterization of In2O3 Thin Films Prepared by Electron Beam Evaporation Technique.

摘要

ABSTRACT High purity Indium oxide powder was used to prepare In2O3 thin films using electron beam evaporation technique. Ultrasonically cleaned substrates were used for the deposition of In2O3 thin films. Welldefined and good quality In2O3 thin films were formed by maintaining substrate temperatures between 300K 573K. The thin films were characterized using XRD, SEM, AFM, EDS and UV-VIS spectroscopy, to study the effect of substrate temperature on the properties of In2O3 thin films. The XRD pat.