Direct writing of electronic devices on graphene oxide by catalytic scanning probe lithography

摘要

Reduction of graphene oxide at the nanoscale is an attractive approach to graphene-based electronics. Here we use a platinum-coated atomic force microscope tip to locally catalyse the reduction of insulating graphene oxide in the presence of hydrogen. Nanoribbons with widths ranging from 20 to 80?nm and conductivities of >104?S?m?1 are successfully generated, and a field effect transistor is produced. The method involves mild operating conditions, and uses arbitrary substrates, atmospheric pressure and low temperatures (≤115?°C).. ? 2012 Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.