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首页> 外文期刊>Nature Communications >Polaron hopping mediated by nuclear tunnelling in semiconducting polymers at high carrier density
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Polaron hopping mediated by nuclear tunnelling in semiconducting polymers at high carrier density

机译:高载流子密度下半导体聚合物中核隧道介导的极化子跳跃

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The transition rate for a single hop of a charge carrier in a semiconducting polymer is assumed to be thermally activated. As the temperature approaches absolute zero, the predicted conductivity becomes infinitesimal in contrast to the measured finite conductivity. Here we present a uniform description of charge transport in semiconducting polymers, including the existence of absolute-zero ground-state oscillations that allow nuclear tunnelling through classical barriers. The resulting expression for the macroscopic current shows a power-law dependence on both temperature and voltage. To suppress the omnipresent disorder, the predictions are experimentally verified in semiconducting polymers at high carrier density using chemically doped in-plane diodes and ferroelectric field-effect transistors. The renormalized current-voltage characteristics of various polymers and devices at all temperatures collapse on a single universal curve, thereby demonstrating the relevance of nuclear tunnelling for organic electronic devices.
机译:假设半导体聚合物中电荷载体的单跳跃迁速率是热活化的。当温度接近绝对零时,与测得的有限电导率相反,预测的电导率变得极小。在这里,我们对半导体聚合物中的电荷传输进行统一描述,包括存在绝对零基态振荡,该振荡允许核隧穿经典势垒。宏观电流的最终表达式显示出功率定律对温度和电压的依赖性。为了抑制无所不在的混乱,使用化学掺杂的面内二极管和铁电场效应晶体管在高载流子密度的半导体聚合物中通过实验验证了这一预测。各种聚合物和器件在所有温度下的重新归一化的电流-电压特性在一条通用曲线上崩溃,从而证明了核隧穿与有机电子器件的相关性。

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