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首页> 外文期刊>Bulletin of the Korean Chemical Society >HBr Formation from the Reaction between Gas-phase Bromine Atom and Vibrationally Excited Chemisorbed Hydrogen Atoms on a Si(001)-(2 ?? 1) Surface
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HBr Formation from the Reaction between Gas-phase Bromine Atom and Vibrationally Excited Chemisorbed Hydrogen Atoms on a Si(001)-(2 ?? 1) Surface

机译:Si(001)-(2 ?? 1)表面上气相溴原子与振动激发的化学吸附氢原子之间的反应形成HBr

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摘要

We have calculated the probability of HBr formation and energy disposal of the reaction exothermicity in HBr produced from the reaction of gas-phase bromine with highly covered chemisorbed hydrogen atoms on a Si (001)-(2 】 1) surface. The reaction probability is about 0.20 at gas temperature 1500 K and surface temperature 300 K. Raising the initial vibrational state of the adsorbate(H)-surface(Si) bond from the ground to v = 1, 2 and 3 states causes the vibrational, translational and rotational energies of the product HBr to increase equally. However, the vibrational and translational motions of product HBr share most of the reaction energy. Vibrational population of the HBr molecules produced from the ground state adsorbate-surface bond (vHSi = 0) follows the Boltzmann distribution, but it deviates seriously from the Boltzmann distribution when the initial vibrational energy of the adsorbate-surface bond increases. When the vibration of the adsorbate-surface bond is in the ground state, the amount of energy dissipated into the surface is negative, while it becomes positive as vHSi increases. The energy distributions among the various modes weakly depends on surface temperature in the range of 0-600 K, regardless of the initial vibrational state of H(ad)-Si(s) bond.
机译:我们已经计算出了气相溴与Si(001)-(2} 1)表面上高度覆盖的化学吸附氢原子反应生成的HBr中HBr形成的可能性和反应放热的能量处置。在气体温度1500 K和表面温度300 K时,反应概率约为0.20。将吸附物(H)-表面(Si)键的初始振动状态从地面提高到v = 1、2和3状态会导致振动,产物HBr的平移和旋转能均等增加。但是,产物HBr的振动和平移运动共享大部分反应能量。由基态吸附物-表面键(vHSi = 0)产生的HBr分子的振动种群遵循玻尔兹曼分布,但是当吸附物-表面键的初始振动能增加时,其与玻耳兹曼分布严重偏离。当被吸附物-表面键的振动处于基态时,耗散到表面的能量为负,而随着vHSi的增加,能量变为正。不管H(ad)-Si(s)键的初始振动状态如何,各种模式之间的能量分布都弱依赖于0-600 K范围内的表面温度。

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