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首页> 外文期刊>Journal of the Magnetics Society of Japan >Permeability Measurements of Magnetic Thin Films using Shielded Short-Circuited Microstrip Lines
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Permeability Measurements of Magnetic Thin Films using Shielded Short-Circuited Microstrip Lines

机译:使用屏蔽的短路微带线测量磁性薄膜的磁导率

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摘要

??A method to measure wideband permeability was developed for 5-mm-square magnetic thin film from 0.1 to 10 GHz by using a shielded short-circuited microstrip line as the test fixture. The S _(11) parameters of the test fixture were measured with a vector network analyzer (VNA). The permeability was derived, based on the lumped element approximation, by comparing S _(11s) with S _(11os) which corresponded to without and with a strong magnetic field parallel to the microwave magnetic field caused by the microstrip line. In this case, the influence of substrate on which the thin film prepared could not be neglected due to the small gap between the microstrip line and the substrate. We introduced a method to derive an effective permittivity ε_(e) caused by the substrate by comparing S _(11o) of blank fixture with S _(11os) of fixture with sample under a strong static magnetic field. We also propose a method of determining whether the lumped element approximation is valid or not.
机译:通过使用屏蔽的短路微带线作为测试夹具,开发了一种从0.1到10 GHz的5平方毫米磁性薄膜测量宽带导磁率的方法。使用矢量网络分析仪(VNA)测量了测试夹具的i_(11)参数。根据集总元素近似值,通过将 S _(11s)与 S _(11os)进行比较,得出磁导率,后者对应于没有磁场且平行于由磁场引起的微波磁场的强磁场微带线。在这种情况下,由于微带线和基板之间的间隙小,因此不能忽略制备了薄膜的基板的影响。我们介绍了一种通过在强静磁场下将空白夹具的 S _(11os)与样品的夹具的 S _(11os)进行比较,得出由基板引起的有效介电常数ε_(e)的方法。我们还提出了一种确定集总元素逼近是否有效的方法。

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