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A facile approach to microwave heating synthesis of silicon carbide from unmixed silicon powders

机译:从未混合的硅粉中微波加热合成碳化硅的简便方法

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Microwave heating is often used to fabricate silicon carbide (SiC) from mixtures of silicon and carbon powders. Mixing these reactant powders has been considered important because the carbonization of silicon has long been regarded as a solid-state reaction occurring via atomic diffusion among powders. Here, we present a facile alternative approach to microwave-heating synthesis of SiC from silicon powder which was simply embedded in graphite powder without mixing with the graphite powder. 10-min microwave heating in air turned the silicon powder into a consolidated chunk of almost fully carbonized β-SiC. This result suggests that carbon atoms experienced a millimeter-order mass transfer from graphite to silicon within 10 min. Atomic diffusion alone can hardly explain such a large transfer of carbon atoms within such a short period. The rapid reaction displayed by the long-distance mass transfer of carbon can be explained instead by gas-solid carbonization between carbon monoxide (CO) and solid silicon, since the atmosphere in which the reaction occurred comprised a vast majority of CO gas, according to the Boudouard equilibrium.
机译:经常使用微波加热由硅粉和碳粉的混合物制造碳化硅(SiC)。混合这些反应物粉末被认为是重要的,因为长期以来一直认为硅的碳化是通过粉末中原子扩散发生的固态反应。在这里,我们提出了一种从硅粉微波加热合成SiC的简便方法,该方法简单地嵌入石墨粉中而不与石墨粉混合。在空气中加热10分钟,将硅粉转变成几乎完全碳化的β-SiC固结块。该结果表明,碳原子在10分钟内经历了从石墨到硅的毫米级质量转移。单靠原子扩散很难解释这么短时间内碳原子的大量转移。根据碳的远距离传质所显示的快速反应,可以用一氧化碳(CO)和固体硅之间的气固碳化来解释,因为发生反应的气氛占了绝大多数的CO气体。 Boudouard平衡。

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