Synthesis of high purity sinterable silicon carbide powder. Final report.

摘要

High purity, submicron silicon carbide powders were produced via gas phase synthesis using a hydrogen/argon plasma. Two test facilities were constructed, a bench-scale unit and a larger pilot scale reactor. Three candidate silicon sources were evaluated:silicon tetrachloride (SiCl(sub 4)). dimethyldichlorosilane (CH(sub 3))(sub 2)(SiCl(sub 2)) and methyltrichlorosilane (CH(sub 3)SiCl(sub 3)). Product powders were evaluated on the basis of pressureless sinterability, surface area, agglomeration, particle size distribution, phase distribution and chemistry. Three commercial powders, Starck A10, Starck B10, and Carborundum submicron alpha silicon carbide, were also evaluated for comparison to the product powders. Powders were reproducibly synthesized at a rate of one pound per hour for standard run times of five hours. Product powders exhibited chemical and physical properties equal to or exceeding the commercial powders evaluated. In limited attempts to pressureless sinter the product powders, densities of 91% of theoretical were obtained with as-produced powder. Post-processing permitted densities in excess of 97% of theoretical. X-ray diffraction of the product indicates that the product powders are primarily beta poly-types, with traces of alpha present. Increased production rates to a target level of seven pounds per hour were not possible due to current transients produced by the pilot scale power supply. Extensive unsuccessful efforts to reduce or eliminate the transients are described. Low recovered product yields resulted from a failure of a product collection filter that was not discovered until the completion of the project.