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首页> 外文期刊>Journal of Surface Analysis >Angular Distribution of Secondary Ions under FIB-shave-off Condition -Toward Development of Three-Dimensional Secondary Ion Image System-
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Angular Distribution of Secondary Ions under FIB-shave-off Condition -Toward Development of Three-Dimensional Secondary Ion Image System-

机译:FIB刮除条件下二次离子的角度分布-走向三维二次离子图像系统的发展-

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In our previous studies, some approaches have been taken to get three-dimensional (3D) image for both inorganic and organic materials using FIB-ToF-SIMS technique. Of these, shave-off cross-sectioning and metal-assisted shave-off processes were predominant. In the present study, a further approach has been taken to get a 3D image through developing 3D shave-off cross-sectioning method for the generation of secondary ions. Currently used shave-off cross-sectioning method is able to provide 2D image on X-Z plane and that can be improved into 3D by using resistive anode detector through changing the optical transportation system of the secondary ions. Installation of cylindrical lens along Z-axis shows 1000 times magnification of the real image on the detector. For investigation of angular distribution of secondary ions, shape and/or angle of the shave-off cross-sectioning areas, using W-wires as model samples, was evaluated. Shave-off method exhibited the formation of a certain shape of the sample surface with 87° angle. The peak angle of the generated secondary ions was ~45° for 87° tilted samples (Si-wafer and Al-foil) and the observed secondary ion images were 2D by using a resistive anode detector. No significant change in angular distribution of the secondary ions was observed from highly roughness (Al-foil) and almost flat surfaces (Si-wafer).
机译:在我们以前的研究中,已经采取了一些方法来使用FIB-ToF-SIMS技术获得无机和有机材料的三维(3D)图像。其中,主要是刮除横截面和金属辅助刮除工艺。在本研究中,采取了进一步的方法,通过开发3D刮除横截面方法来生成3D图像,以生成二次离子。当前使用的刮除横截面方法能够在X-Z平面上提供2D图像,并且可以通过更改二次离子的光学传输系统,通过使用电阻阳极检测器将其改进为3D。沿Z轴安装柱面透镜可将检测器上的真实图像放大1000倍。为了研究次级离子的角度分布,使用W-wires作为模型样本,评估了剃须截面积的形状和/或角度。刮除法显示出样品表面以87°角形成一定形状。对于87°倾斜的样品(硅晶片和铝箔),生成的二次离子的峰角约为〜45°,并且使用电阻阳极检测器观察到的二次离子图像为2D。在高粗糙度(铝箔)和几乎平坦的表面(硅晶圆)中,未观察到次级离子角度分布的显着变化。

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