Two dimensional finite element method simulation to determine the brain capacitance based on ECVT measurement

S H Sirait; W P Taruno; S N Khotimah; F Haryanto

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Two dimensional finite element method simulation to determine the brain capacitance based on ECVT measurement

机译：基于ECVT测量的二维有限元方法仿真确定脑电容

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Asimulationtodeterminecapacitanceofbrain'selectricalactivitybasedontwoelectrodesECVTwasconductedinthisstudy.Thisstudybeganwithconstructionof2DcoronalheadgeometrywithfivedifferentlayersandECVTsensordesign,andthenbothofthesedesignsweremerged.Afterthat,boundaryconditionswereappliedontwoelectrodesintheECVTsensor.ThefirstelectrodewasdefinedasaDirichletboundaryconditionwith20VinpotentialandanotherelectrodewasdefinedasaDirichletboundaryconditionwith0Vinpotential.SimulatedHodgkin-Huxley-basedactionpotentialswereappliedaselectricalactivityofthebrainandsequentiallywereputon3differentcross-sectionalpositions.Asthegoverningequation,thePoissonequationwasimplementedinthegeometry.Poissonequationwassolvedbyfiniteelementmethod.Thesimulationshowedthatthesimulatedcapacitancevalueswereaffectedbyactionpotentialsandcross-sectionalactionpotentialpositions...

机译：Asimulationtodeterminecapacitanceofbrain'selectricalactivitybasedontwoelectrodesECVTwasconductedinthisstudy.Thisstudybeganwithconstructionof2DcoronalheadgeometrywithfivedifferentlayersandECVTsensordesign，andthenbothofthesedesignsweremerged.Afterthat，boundaryconditionswereappliedontwoelectrodesintheECVTsensor.ThefirstelectrodewasdefinedasaDirichletboundaryconditionwith20VinpotentialandanotherelectrodewasdefinedasaDirichletboundaryconditionwith0Vinpotential.SimulatedHodgkin - 赫胥黎-basedactionpotentialswereappliedaselectricalactivityofthebrainandsequentiallywereputon3differentcross-sectionalpositions.Asthegoverningequation，thePoissonequationwasimplementedinthegeometry.Poissonequationwassolvedbyfiniteelementmethod.Thesimulationshowedthatthesimulatedcapacitancevalueswereaffectedbyactionpotentialsandcross-sectionalactionpotentialpositions ...

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《Journal of Physics: Conference Series》 |2016年第1期|共页
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S H Sirait; W P Taruno; S N Khotimah; F Haryanto;
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Two dimensional finite element method simulation to determine the brain capacitance based on ECVT measurement

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