Investigation of Cr doped CdTe for optoelectronic and spintronic devices applications

摘要

Electronic, optical and magnetic properties of Cr doped CdTe dilute magnetic semiconductors were studied by using density functional theory (DFT).Electronic band structure and density of states (DOS) for spin-up and spin-down states were investigated which confirmed the half metallic ferromagnetic (HMF) behavior of synthesized material. Band gap increased from 0.73 to 1.41 eV in spin-downstate by Cr doping of 6.25% to 25% in CdTe binary compound. In optical properties, optical conductivity, absorption coefficient, extinction coefficient, real and imaginary parts of dielectric function and refractive index were studied in detail. It was observed that Cr play important role in the ferromagnetic behavior ofCd1-xCrxTe compound. Results revealed that Cd1-xCrxTe is a promising candidate for optoelectronics and spintronics devices applications.