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首页> 外文期刊>Journal of Ovonic Research >Preparation and characterization of ZnO: SnOSUB2/SUB nanocomposite thin films on porous silicon as HSUB2/SUBS gas sensor
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Preparation and characterization of ZnO: SnOSUB2/SUB nanocomposite thin films on porous silicon as HSUB2/SUBS gas sensor

机译:作为H 2 S气体传感器的多孔硅上ZnO:SnO 2 纳米复合薄膜的制备与表征

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摘要

Mixed nanocomposite thin films of ZnO-SnO2 were prepared by chemical spray pyrolysis. It deposited on glass and porous silicon substrates at 400 C°. The structure properties of the sensor material were analyzed by XRD and AFM. The results obtained that the films are polycrystalline with nano grain size. the optical transmission was decreased while the optical energy gap was increased with increasing of SnO2 ratio. The sensor response was estimated by changing in the electrical resistance of the sensor films with 25% H2S gas of different temperatures. The mixed oxide sensor gives a sensitivity of H2S gas three times greater than the sensitivity of a single SnO2 gas sensor. The higher sensitivity of mixed oxide is 92% on porous silicon at 200C° operating temperature ,with response time of 16s and recovery time 28s. The high response of ZnO-SnO2 nanocomposite sensoris an indicator of a high efficiency of H2S gas sensing.
机译:采用化学喷雾热解法制备了ZnO-SnO2纳米复合薄膜。它在400°C下沉积在玻璃和多孔硅基板上。通过XRD和AFM分析了传感器材料的结构特性。结果获得的膜是具有纳米粒度的多晶。随着SnO2比的增加,光传输率降低,光能隙增大。通过改变不同温度的25%H2S气体传感器膜的电阻来估算传感器响应。混合氧化物传感器提供的H2S气体灵敏度是单个SnO2气体传感器的灵敏度的三倍。在200°C的工作温度下,混合氧化物对多孔硅的敏感性更高,为92%,响应时间为16s,恢复时间为28s。 ZnO-SnO2纳米复合传感器的高响应性是H2S气体传感效率高的指标。

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