Modeling of photogenerated current in CIGS graded solar cells

摘要

In this paper, an analytical model for the simulation of the photocurrent generated in graded CIGS based solar cells has been developed. The electron-hole pair generation rate and the photo-generated current J L were determined analytically and then mod ulated as function of thickness, gap energy and graded acceptor concentration N A . Based on the simulation results, an optimal graded band-gap structure for the CIGS solar cell has been proposed. The optimum thickness of graded CIGS absorber layer determined by numerical simulation is found to be around 3 μm and the highest J L is arround 34.84 mA/cm 2 . The simulation presented shows how cell parameters can be varied to improve the cell performances.