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首页> 外文期刊>Journal of nanomaterials >Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering
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Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

机译:偏置电压对磁控溅射制备Ti:Si-掺杂C-H的Ti:Si薄膜的组成,结构和性能的影响

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摘要

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.
机译:在氩气和甲烷混合气氛中,通过磁控溅射TiSi靶,以不同的施加偏压制备了钛和硅掺杂的a-C:H薄膜。通过XPS,AFM,拉曼,FTIR光谱和纳米压头研究了施加的偏压对薄膜的组成,表面形态,结构和机械性能的影响。在UMT-2MT摩擦计上表征了薄膜的摩擦学性能。结果表明,随着施加的偏置电压增加到-200 V,薄膜变得更光滑和致密,而随着施加的偏置电压的进一步增加,由于离子轰击的增强,表面粗糙度也增加了。随着施加偏压的增加,薄膜中的sp3碳分数单调降低。薄膜在-100 V的偏压下表现出中等的硬度和优异的摩擦学性能,其摩擦学行为与薄膜的H / E或H3 / E2比相关。

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