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On Improving Reliability of SRAM-Based Physically Unclonable Functions

机译:基于SRAM的物理不可克隆函数的可靠性提高

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Physically unclonable functions (PUFs) have been touted for their inherent resistance to invasive attacks and low cost in providing a hardware root of trust for various security applications. SRAM PUFs in particular are popular in industry for key/ID generation. Due to intrinsic process variations, SRAM cells, ideally, tend to have the same start-up behavior. SRAM PUFs exploit this start-up behavior. Unfortunately, not all SRAM cells exhibit reliable start-up behavior due to noise susceptibility. Hence, design enhancements are needed for improving reliability. Some of the proposed enhancements in literature include fuzzy extraction, error-correcting codes and voting mechanisms. All enhancements involve a trade-off between area/power/performance overhead and PUF reliability. This paper presents a design enhancement technique for reliability that improves upon previous solutions. We present simulation results to quantify improvement in SRAM PUF reliability and efficiency. The proposed technique is shown to generate a 128-bit key in ≤0.2 μ s at an area estimate of 4538 μ m 2 with error rate as low as 10 ? 6 for intrinsic error probability of 15%.
机译:物理上不可克隆的功能(PUF)因其对入侵攻击的固有抵抗力以及为各种安全应用程序提供信任的硬件基础的低成本而受到吹捧。 SRAM PUF特别是在密钥/ ID生成行业中很流行。由于固有的工艺变化,理想情况下,SRAM单元倾向于具有相同的启动行为。 SRAM PUF利用了这种启动行为。不幸的是,由于易受噪声影响,并不是所有的SRAM单元都具有可靠的启动性能。因此,需要改进设计以提高可靠性。文献中提出的一些增强功能包括模糊提取,纠错码和表决机制。所有增强功能都涉及面积/功率/性能开销与PUF可靠性之间的权衡。本文提出了一种针对可靠性的设计增强技术,该技术对以前的解决方案进行了改进。我们提供了仿真结果,以量化SRAM PUF可靠性和效率的提高。结果表明,所提出的技术能够在面积估计为4538μm 2的情况下,在≤0.2μs的时间内产生128位密钥,错误率低至10? 6为15%的固有错误概率。

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