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Laser Assisted Machining Process of HIPed Silicon Nitride

机译:HIP氮化硅的激光辅助加工工艺

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In this study, fiber coupled HPDL was employed for Laser-Assisted Machining (LAM) of Hot Isostatically Pressed (HIPed) silicon nitride workpieces. In LAM, the intense energy of laser was used to enhance the machinability by locally heating the workpiece and thus reducing its yield strength. In this experiment, the laser power ranged from 200 W to 800 W while the diameter of the workpiece was 16mm. While machining, the surface temperature was kept nearly constant by laser heating after a preheat phase of 58 seconds. Microscopy observations of machined surfaces and chips were performed to understand the mechnical behavior of silicon nitride with temperature. The effects of chip formation temperature on machining characteristics were assessed by measuring the cutting forces and flank wear. At a temperature of about 1153 ?? , a good quality machined surface on the HIPed silicon nitride workpiece was obtained with no grain pullout regions and little oxida- tion layer.
机译:在这项研究中,光纤耦合HPDL用于热等静压(HIPed)氮化硅工件的激光辅助加工(LAM)。在LAM中,激光的强能量被用来通过局部加热工件来提高可加工性,从而降低其屈服强度。在该实验中,当工件直径为16mm时,激光功率范围为200 W至800W。加工时,在58秒的预热阶段后,通过激光加热使表面温度几乎保持恒定。进行机械加工的表面和芯片的显微镜观察以了解氮化硅随温度的机械行为。通过测量切削力和后刀面磨损来评估切屑形成温度对加工特性的影响。在约1153℃的温度下,可以在HIP化的氮化硅工件上获得高质量的机加工表面,没有晶粒拉出区域,几乎没有氧化层。

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